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Metal-free heteroatom-doped carbocatalysts are promising alternatives to precious metals for alkane direct dehydrogenation/hydrogenation and reversible hydrogen storage, yet the nature of their active sites remains poorly understood. This study investigates a nitrogen assembly carbocatalyst (NAC) for efficient and selective hydrocarbon dehydrogenation. For ethylbenzene, NAC maintains a selectivity of >99% towards styrene at a conversion of >20% for 120 hours at a weight hourly space velocity of 0.4 h⁻¹. Theoretical studies suggest that closely spaced graphitic nitrogen sites are the active sites for the chemisorption and dehydrogenation of ethylbenzene, and the robustness of these sites is supported by ambient-pressure X-ray photoelectronmore » spectroscopy. Kinetic analysis reveals a temperature-dependent reaction profile, with distinct activation energies and reaction orders at 300 and 500 °C. Isotope-labeling studies indicate that dehydrogenation primarily proceeds via initial cleavage of the benzylic C–H bond, and the faster desorption of ethylbenzene at higher temperatures contributes to the difference in kinetic behavior. Importantly, the NAC catalyst also enables efficient hydrogenation of styrene back to ethylbenzene at 250 °C, allowing for reversible hydrogen storage using a single catalyst at moderate temperatures. These findings underscore the significance of constructing high densities of closely spaced graphitic nitrogen in carbocatalysts for enhanced activity and selectivity.« less

Quantum coherence in superconducting circuits has increased steadily over the last decades because of a growing understanding of the various loss mechanisms. Recently, tantalum (Ta) emerged as a promising material to address microscopic sources of loss found on niobium (Nb) or aluminum (Al) surfaces. However, the effects of film and interface microstructure on low-temperature microwave loss are still not well understood. Here, in this study, we present a systematic study of the structural and electrical properties of Ta and Nb films sputtered on c-plane sapphire at varying growth temperatures. As growth temperature was increased, our results show that the onsetmore » of epitaxial growth of $\alpha$ -phase Ta correlates with lower Ta surface roughness, higher critical temperature, and higher residual resistivity ratio, but surprisingly also correlates with a significant increase in loss at microwave frequency. Notably, this high level of loss is not observed in Nb films prepared in the same way and having very similar structure. By experimentally controlling the surface on which the Ta film is nucleated, we determine that the source of loss was only present in samples having an epitaxial Ta/sapphire interface and show that it was apparently mitigated by either growing a thin, epitaxial Nb interlayer between the Ta film and the substrate or by intentionally treating, and effectively damaging, the sapphire surface with an in situ argon plasma before Ta growth. In addition to elucidating this interfacial microwave loss, this work provides adequate process details to aid reproducible growth of low-loss Ta films across fabrication facilities.« less

Superconducting quantum bits (qubits) rely on ultra-thin, amorphous oxide tunneling barriers that can have significant inhomogeneities and defects as grown. This can result in relatively large uncertainties and deleterious effects in the circuits, limiting the scalability. Finding a robust solution to the junction reproducibility problem has been a long-standing goal in the field. Here, we demonstrate a transformational technique for controllably tuning the electrical properties of aluminum-oxide tunnel junctions. This is accomplished using a low-voltage, alternating-bias applied individually to the tunnel junctions, with which resistance tuning by more than 70% can be achieved. The data indicates an improvement of coherence andmore » reduction of two-level system defects. Transmission electron microscopy shows that the treated junctions are predominantly amorphous, albeit with a more uniform distribution of alumina coordination across the barrier. This technique is expected to be useful for other devices based on ionic amorphous materials.« less

The challenge underlying superconducting quantum computing is to remove materials bottleneck for highly coherent quantum devices. The nonuniformity and complex structural components in the underlying quantum circuits often lead to local electric field concentration, charge scattering, dissipation and ultimately decoherence. Here we visualize interface dipole heterogeneous distribution of individual Al/AlO$$_{x}$$/Al junctions employed in transmon qubits by broadband terahertz scanning near-field microscopy that enables the non-destructive and contactless identification of defective boundaries in nano-junctions at an extremely precise nanoscale level. Our THz nano-imaging tool reveals an asymmetry across the junction in electromagnetic wave-junction coupling response that manifests as hot (high intensity) vsmore » cold (low intensity) spots in the spatial electrical field structures and correlates with defected boundaries from the multi-angle deposition processes in Josephson junction fabrication inside qubit devices. The demonstrated local electromagnetic scattering method offers high sensitivity, allowing for reliable device defect detection in the pursuit of improved quantum circuit fabrication for ultimately optimizing coherence times.« less

Abstract Magnetic defects play an important, but poorly understood, role in magnetic topological insulators (TIs). For example, topological surface transport and bulk magnetic properties are controlled by magnetic defects in Bi ₂ Se ₃ ‐based dilute ferromagnetic (FM) TIs and MnBi ₂ Te ₄ (MBT)‐based antiferromagnetic (AFM) TIs. Despite its nascent ferromagnetism, the inelastic neutron scattering data show that a fraction of the Mn defects in Sb ₂ Te ₃ form strong AFM dimer singlets within a quintuple block. The AFM superexchange coupling occurs via Mn–Te–Mn linear bonds and is identical to the AFM coupling between antisite defects and themore » FM Mn layer in MBT, establishing common interactions in the two materials classes. It is also found that the FM correlations in (Sb _{1− x} Mn _x ) ₂ Te ₃ are likely driven by magnetic defects in adjacent quintuple blocks across the van der Waals gap. In addition to providing answers to long‐standing questions about the evolution of FM order in dilute TI, these results also show that the evolution of global magnetic order from AFM to FM in Sb‐substituted MBT is controlled by defect engineering of the intrablock and interblock coupling.« less